Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
作者： Scott Brad Herner , Mark Harold Clark
DOI:
关键词: Silicon-germanium 、 Silicon 、 Dielectric 、 Substrate (electronics) 、 Amorphous silicon 、 Metallurgy 、 Resistive touchscreen 、 Non-volatile memory 、 Layer (electronics) 、 Composite material 、 Materials science
摘要: A method of forming a non-volatile memory device includes providing substrate having surface, depositing dielectric overlying the first wiring structure dielectric, silicon material structure, layer thickness less than about 100 Angstroms, germanium at temperature raging from 400 to 490 Degrees Celsius using as seed layer, wherein is substantially free voids and has polycrystalline characteristics, resistive switching (e.g. amorphous material) material, conductive second material.
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