作者: Suvi Haukka , Hannu Huotari
DOI:
关键词: Inorganic chemistry 、 Carbon film 、 Atomic layer deposition 、 Thin film 、 Boron 、 Nitride 、 Silicon 、 Optoelectronics 、 Doping 、 Physical vapor deposition 、 Materials science
摘要: A process for producing metal nitride thin films comprising doping the by atomic layer deposition (ALD) with silicon or boron a combination thereof. The work function of films, which are used in electrode applications, can efficiently be tuned.