ALE growth of ZnS1-xSex thin films by substituting surface sulfur with elemental selenium
作者： Jarkko Ihanus , Mikko Ritala , Markku Leskelä , Eero Rauhala
DOI: 10.1016/S0169-4332(96)00984-1
关键词:
摘要: Abstract Polycrystalline ZnS1−xSex thin films were grown from ZnCl2, H2S and Se on soda lime substrates using the atomic layer epitaxy technique. The selenium was incorporated into by substituting sulfur atoms surface of growing film with elemental selenium. ZnCl2 pulses used in every cycle selenium, which only a certain fraction cycles, always pulsed after H2S. Growth temperatures 400 500°C. Rutherford backscattering spectroscopy energy dispersive X-ray measurements indicated that x can be varied between 0 0.8. Interplanar spacings evaluated XRD data linearly as function x, thereby verifying existence solid solution.
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