Properties of ZnO'Al 2 O 3 Alloy Films Grown Using Atomic Layer Deposition Techniques
作者： J. W. Elam , D. Routkevitch , S. M. George
DOI: 10.1149/1.1569481
关键词: Analytical chemistry 、 Surface roughness 、 Materials science 、 Insulator (electricity) 、 Electrical resistivity and conductivity 、 Alloy 、 Refractive index 、 Atomic layer deposition 、 Growth rate 、 Crystallinity 、 Mineralogy
摘要: By varying the ratio of constituents, compound films can exhibit a widely tunable range physical properties. Atomic layer deposition (ALD) techniques are based on sequential, self-limiting surface reactions and grow films. In this study, ZnO/Al 2 O 3 alloy were prepared using ALD techniques. adjusting pulse sequence, film composition was varied from 0-100% ZnO. These expected to display properties because ZnO Al have very different For example, is conductor an insulator. The alloys explored variety growth rate, refractive index, composition, roughness, crystallinity, resistivity density could be continuously tuned over full values defined by pure oxides. index n = 2.00 for 1.64 . 18 orders magnitude 10 Ω cm 16 Anomalies in roughness vs. Zn content observed at ∼76%. anomalies attributed, part, etching Al(CH ) during growth.
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