PROPERTIES OF ATOMIC LAYER DEPOSITED (TA1-XNBX)2O5 SOLID SOLUTION FILMS AND TA2O5-NB2O5 NANOLAMINATES
作者： Kaupo Kukli , Mikko Ritala , Markku Leskelä
DOI: 10.1063/1.371576
关键词:
摘要: (Ta1−xNbx)2O5 solid solution films and Ta2O5–Nb2O5 nanolaminates have been grown in an atomic layer deposition process at 300 325 °C. TaCl5 or Ta(OC2H5)5 Nb(OC2H5)5 used as metal precursors while H2O has applied the oxygen source. Application of resulted amorphous with considerably better thickness uniformity than that characteristic TaCl5-based process. crystallized films. The high-field leakage current x=0.02–0.07 decreases by two to three orders magnitude when compared nondoped Ta2O5. permittivity Ta2O5 was 25 partially increased up 33.
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