A comparative study of atomic layer deposited advanced high-k dielectrics
作者： S. Duenas , H. Castan , H. Garcia , J. Barbolla , K. Kukli
DOI: 10.1109/SCED.2005.1504298
关键词:
摘要: A comparative electrical characterization of metal-insulator-semiconductor (MIS) structures fabricated from atomic layer deposited (ALD) Al/sub 2/O/sub 3/, Ta/sub 5/ and Nb/sub 5/-Ta/sub 5/-Nb/sub dielectric thin films on silicon substrates has been carried out. The interface states as well defects inside the insulator bulk were measured by using capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) conductance-transient (G-t) techniques. Interface quality is poorer in case (D/sub it/ about 6 /spl times/ 10/sup 12/ cm/sup -2/ eV/sup -1/) than 3/ ones values up to 1 -1/). Also, addition buffer layers 5/-based MIS degrades structure reaches 1.2 13/
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