Atomic layer epitaxy of CdTe, MgTe and MnTe; growth of CdTe/MnTe tilted superlattices on vicinal surfaces
作者： J.M Hartmann , M Charleux , H Mariette , J.L Rouvière
DOI: 10.1016/S0169-4332(96)00978-6
关键词: Crystallography 、 Electron diffraction 、 Atomic layer epitaxy 、 Vicinal 、 Epitaxy 、 Chemistry 、 Telluride 、 Cadmium telluride photovoltaics 、 Reflection high-energy electron diffraction 、 Superlattice
摘要: Abstract Atomic layer epitaxy (ALE) is investigated for binary semiconductors of the telluride family, namely CdTe, MgTe and MnTe. Thanks to a systematic reflection high energy electron diffraction (RHEED) study, an autoregulated growth at 0.5 monolayer/ALE cycle obtained CdTe in substrate temperature range between 260°C 290°C. RHEED studies on ALE, together with X-ray experiments ALE grown CdTe/MgTe superlattices, reveal that 0.7±0.1 can be achieved 260 300°C. For MnTe, all deposited Mn atoms get incorporated, so no achieved, as illustrated by transmission microscopy (TEM) data CdTe/MnTe superlattices. Finally, this know-how used tilted superlattices onto (001) CdZnTe vicinal surfaces.
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