Precursors as enablers of ALD technology: Contributions from University of Helsinki

摘要: Abstract The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca, Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These are needed in different high tech applications but challenging for ALD. Their precursor design needs careful balancing between volatility, thermal stability reactivity—the key properties precursors. extensive studies showed that cyclopentadienyl based metals versatile which react with both water ozone forming oxide. Group chemistry has been studied very widely many good have found the oxide From a bunch compound types most promising bismuth is Bi(OCMe 2 i Pr) 3 shows stable process at 150–250 °C. success depositing noble metal films by can be attributed more to reactant rather than precursor. Ru, Pt, Ir, Rh Os deposited from various organometallic organic using O other Typically temperatures above 225 °C needed. Using lower temperatures. Noble oxides obtained below approx. 200 °C metallic that. By supplying H consecutive pulses, well 200 °C. For silver phosphine stabilized carboxylato β-diketonato complexes thermally enough enabling hydrogen plasma enhanced films. Alkylsilyl compounds selenium selenide telluride when combined chloride use alkylsilyl not limited 16 also used 15.