Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material
作者： C. Baristiran Kaynak , M. Lukosius , B. Tillack , Ch. Wenger , T. Blomberg
DOI: 10.1016/J.MEE.2011.03.022
关键词:
摘要: Metal-Insulator-Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO"3 dielectric and Al"2O"3/SrTiO"3/Al"2O"3 multilayer have been on TaN TiN bottom electrodes. The MIM stacks analyzed compared in terms of electrical structural properties. results indicate that MIMs dielectrics provide better leakage current performance than the ones while capacitance density is decreased. Additional Al"2O"3 layers prevented crystallization stack. decreased attributed to amorphous structure series top layers. Furthermore, electrodes indicated one lower correlated interfacial formation between
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