Characterization of tantalum oxy-nitrides deposited by ECR sputtering
作者： Koji Kato , Hiroshi Toyota , Yoshito Jin , Toshiro Ono
DOI: 10.1016/J.VACUUM.2008.04.045
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摘要: Abstract We have investigated the electrical characteristics of tantalum oxy-nitride (TaON) films deposited using electron cyclotron resonance (ECR) plasma sputtering. A pure metal target was used as raw material combined with gases oxygen and nitrogen. The properties been measured metal–insulator–metal (MIM) structures Al/TaON/Ru/Si or metal–insulator–semiconductor (MIS) structure Al/TaON/Si. By controlling gas flow in a moderate low rate at fixed nitrogen flow, TaON stably obtained refractive indices over 2.5 632.8 nm wavelength, dielectric constants 30. However, leakage currents increased an increase constants. To improve current, we periodical deposition process, which ECR irradiation additionally introduced after thin film deposited. breakdown strength about 1 MV/cm by measurement MIM structure. estimation C–V silicon–MIS TaON, constant 34 for thickness 12 nm.
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