Properties of HfO2 Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water
作者： Kaupo Kukli , Mikko Ritala , Jun Lu , Anders Hårsta , Markku Leskelä
DOI: 10.1149/1.1770934
关键词:
摘要: … The thickness of 5-45 nm thick films on HF-etched Si was … monotonous increase in the residual contamination when common … to be with carbon and nitrogen residues of 0.3-0.6 and 0.1-…
ecsdl.org参考文章(24)
Takashi Hori, Gate Dielectrics and MOS ULSIs Springer Berlin Heidelberg. ,(1997) , 10.1007/978-3-642-60856-8
Takashi Hori, Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications ,(1997)
Maciej Gutowski, John E. Jaffe, Chun-Li Liu, Matt Stoker, Rama I. Hegde, Raghaw S. Rai, Philip J. Tobin, Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 Applied Physics Letters. ,vol. 80, pp. 1897- 1899 ,(2002) , 10.1063/1.1458692
Y. Hoshino, Y. Kido, K. Yamamoto, S. Hayashi, M. Niwa, Characterization and control of the HfO2/Si(001) interfaces Applied Physics Letters. ,vol. 81, pp. 2650- 2652 ,(2002) , 10.1063/1.1510941
F. Huber, Properties of Hafnium Dioxide Thin-Film Capacitors IEEE Transactions on Parts, Hybrids, and Packaging. ,vol. 7, pp. 141- 147 ,(1971) , 10.1109/TPHP.1971.1136425
Kaupo Kukli, Jarkko Ihanus, Mikko Ritala, Markku Leskela, Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates Applied Physics Letters. ,vol. 68, pp. 3737- 3739 ,(1996) , 10.1063/1.115990
Kaupo Kukli, Mikko Ritala, Jonas Sundqvist, Jaan Aarik, Jun Lu, Timo Sajavaara, Markku Leskelä, Anders Hårsta, Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen Journal of Applied Physics. ,vol. 92, pp. 5698- 5703 ,(2002) , 10.1063/1.1515107
K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, M. Leskelä, Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water Chemical Vapor Deposition. ,vol. 8, pp. 199- 204 ,(2002) , 10.1002/1521-3862(20020903)8:5<199::AID-CVDE199>3.0.CO;2-U
Kaupo Kukli, Mikko Ritala, Timo Sajavaara, Juhani Keinonen, Markku Leskelä, Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors Thin Solid Films. ,vol. 416, pp. 72- 79 ,(2002) , 10.1016/S0040-6090(02)00612-0
Kaupo Kukli, Mikko Ritala, Jaan Aarik, Teet Uustare, Markku Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition Journal of Applied Physics. ,vol. 92, pp. 1833- 1840 ,(2002) , 10.1063/1.1493657