Atomic-layer epitaxy of (100) CdTe on GaAs substrates
作者： W. Faschinger , H. Sitter
DOI: 10.1016/0022-0248(90)90584-8
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摘要: Abstract We present results of atomic-layer epitaxy (ALE) growth (100) oriented CdTe on GaAs substrates. It is shown that exactly one monolayer per reaction cycle possible in a temperature range between 260 and 290° C. In this range, the rate independent substrate temperature. At higher temperatures, second with exists, where average coverage only 0.5 monolayers. A model presented which describes behavior leads to prediction stability ALE process can be shifted by changing molecular beam fluxes.
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