Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy
作者： R. N. Bicknell , R. W. Yanka , N. C. Giles , J. F. Schetzina , T. J. Magee
DOI: 10.1063/1.94736
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摘要: Growth of epitaxial (100) CdTe films on GaAs substrates by molecular beam epitaxy is discussed. X‐ray diffraction, UV reflectance, photoluminescence, and transmission electron microscopy techniques were employed to characterize the film specimens. The high structural perfection layers was evidenced line dislocation densities ≤104/cm2 at free surface ≂6.6 μm thick measurable excitonic photoluminescence (∼1.504 eV) room temperature. epilayers smooth mirrorlike in appearance.
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