CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters
作者： J. M. Hartmann , J. Cibert , F. Kany , H. Mariette , M. Charleux
DOI: 10.1063/1.363714
关键词:
摘要: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high‐energy electron‐diffraction studies on MgTe atomic deposition, together with x‐ray …
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