Atomic layer epitaxy of CdTe and MnTe

摘要: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method directly determining atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring reflection high‐energy electron diffraction (RHEED) sublimation intensity oscillations an ALE grown deposited on a MgTe buffer layer. The autoregulated rate at 0.5 monolayer/cycle (in substrate temperature domain between 260 290 °C) is accounted basis model which relies alternating c(2×2) Cd (2×1) Te surface reconstructions during cycle. RHEED studies MnTe deposition, together with x‐ray transmission microscopy CdTe/MnTe superlattices reveal that all Mn atoms incorporated so no can be achieved. Furthermore, less than one or just monolayer must sent sur...