Cd desorption induced by Zn exposure during atomic layer epitaxy of CdxZn1-xTe
作者： E. M. Larramendi , O. de Melo , I. Hernández-Calderón
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摘要: The substitution of surface Cd atoms by Zn during the growth x 1-x Te atomic layer epitaxy has been studied as a function substrate temperature and exposure time means analysis photoluminescence spectra Te/ZnTe quantum wells. For desorption induced an activation energy 1.5 eV was found. complexity this process denoted fourth order kinetic reaction in 250-280 °C range.
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