作者: W. Faschinger , P. Juza , H. Sitter
DOI: 10.1016/0022-0248(91)90829-T
关键词:
摘要: Abstract We present the first RHEED observations during atomic layer epitaxy growth of CdTe on GaAs substrates. The evolution pattern shows that, despite large lattice mismatch, becomes two-dimensional after deposition a few monolayers. observe intensity variations two spots under surface resonance conditions and show that this new approach is superior to observation specular spot for measurement coverages adsorption kinetics. From variation intensities with substrate temperature, we deduce Cd Te drop 0.5 at temperatures higher than 315°C.