Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates
作者： Roberto Saúl Castillo-Ojeda , Joel Díaz-Reyes , Miguel Galván-Arellano , Francisco de Anda-Salazar , Jorge Indalecio Contreras-Rascon
DOI: 10.1590/1980-5373-MR-2016-0181
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摘要: This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by Atomic Layer Deposition (ALD) regime. Under certain conditions, alternating exposition a substrate surface to element vapours makes possible growth atomic layers in reactor where atmosphere is high-purity hydrogen. was simultaneously at same run, allowing, comparison between effects produced superficial processes due different used substrates, thereby eliminating unintended changes parameters. Nanolayers maintained their shiny appearance even temperatures near 420°C. It found that for exposure times below 2.5 s there not GaAs, while shortest time 1.5 385°C. By HRXRD peak corresponding (004) diffraction plane identified investigated, FWHM resulted very wide (600-800 arcsec) indicating highly distorted lattice mainly mosaicity. Raman scattering shows LO-ZnTe, which weak slightly shifted with reported bulk 210 cm-1. Additionally, measurements suggest crystalline quality have dependence temperature.
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