Characterization of CdTe substrates and MOCVD Cd1−xZnxTe epilayers

摘要: Abstract The quality of CdTe substrates and Cd 1− x Zn Te ( ⩽0.1) epilayers grown by metalorganic chemical vapor deposition (MOCVD) on substrates, were characterized Raman scattering, photoluminescence (PL) as well X-ray double crystal rocking curve (DCRC). At low temperature the intensity LO phonon was enhanced wherever there a structural defect. quantitative measure perfection is related to ratio between defect band excitonic peaks, correlates with full-width at half-maximum (FWHM) layer peak. It shown that in addition these parameters, FWHM PL useful parameter determine epilayer, good correlation obtained different parameters. effect zinc partial pressure during growth reactor design are studied. results indicate crystalline imperfection caused lattice mismatch substrate CdZnTe epilayer nonuniformity composition throughout layers.