Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror
作者： M. Ishii , S. Iwai , H. Kawata , T. Ueki , Y. Aoyagi
DOI: 10.1016/S0022-0248(97)00198-X
关键词:
摘要: Atomic layer epitaxy (ALE) of aluminum phosphide (AlP) is successfully achieved for the first time. Gallium (GaP) ALE also discussed, and it found that smoothens surface roughness substrate. AlP GaP are primarily used fabrication X-ray multilayer mirror. According to layer-by-layer growth nature ALE, reflection wavelength mirrors proved be exactly controlled by cycle number. An AlPGaP mirror with a reflectivity in excess 10% realized at L absorption edge Al AlP.
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Claude Montcalm, J. M. Slaughter, M. Chaker, Patrick A. Kearney, Brian T. Sullivan, M. Ranger, Charles M. Falco, Mo/Y multilayer mirrors for the 8-12-nm wavelength region. Optics Letters. ,vol. 19, pp. 1004- 1006 ,(1994) , 10.1364/OL.19.001004
M. Ozeki, N. Ohtsuka, Y. Sakuma, K. Kodama, Pulsed jet epitaxy of III–V compounds Journal of Crystal Growth. ,vol. 107, pp. 102- 110 ,(1991) , 10.1016/0022-0248(91)90441-7
Y. Sakuma, K. Kodama, M. Ozeki, Atomic layer epitaxy of GaP and elucidation for self‐limiting mechanism Applied Physics Letters. ,vol. 56, pp. 827- 829 ,(1990) , 10.1063/1.102675
I.V. Kozhevnikov, A.I. Fedorenko, V.V. Kondratenko, Yu.P. Pershin, S.A. Yulin, E.N. Zubarev, H.A. Padmore, K.C. Cheung, G.E. van Dorssen, M. Roper, L.L. Balakireva, R.V. Serov, A.V. Vinogradov, Synthesis and measurement of normal incidence X-ray multilayer mirrors optimized for a photon energy of 390 eV Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment. ,vol. 345, pp. 594- 603 ,(1994) , 10.1016/0168-9002(94)90520-7
Troy W. Barbee, Stanley Mrowka, Michael C. Hettrick, Molybdenum-silicon multilayer mirrors for the extreme ultraviolet. Applied Optics. ,vol. 24, pp. 883- 886 ,(1985) , 10.1364/AO.24.000883
J. F. Seely, G. Gutman, J. Wood, G. S. Herman, M. P. Kowalski, J. C. Rife, W. R. Hunter, Normal-incidence reflectance of W/B 4 C multilayer mirrors in the 34–50-Å wavelength region Applied Optics. ,vol. 32, pp. 3541- 3543 ,(1993) , 10.1364/AO.32.003541
Tuomo Suntola, Atomic layer epitaxy Thin Solid Films. ,vol. 216, pp. 84- 89 ,(1992) , 10.1016/0040-6090(92)90874-B
Yoshinobu Aoyagi, Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 1460- 1464 ,(1987) , 10.1116/1.583842
Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano, Sohachi Iwai, Takashi Meguro, Crystallographic selective growth of GaAs by atomic layer epitaxy Applied Physics Letters. ,vol. 63, pp. 1528- 1530 ,(1993) , 10.1063/1.110738
Nobuo Kano, Shingo Hirose, Kazuhiko Hara, Junji Yoshino, Hiro Munekata, Hiroshi Kukimoto, Atomic layer epitaxy of AlAs using ethyldimethylamine alane as a new aluminum source Applied Physics Letters. ,vol. 65, pp. 1115- 1117 ,(1994) , 10.1063/1.112977