Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition
作者： Väino Sammelselg , Ivan Netšipailo , Aleks Aidla , Aivar Tarre , Lauri Aarik
DOI: 10.1016/J.TSF.2013.06.079
关键词:
摘要: Abstract Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors large ranges growth temperatures (80–900 °C) order to reveal process parameters that allow coatings with higher chemical resistance. results obtained demonstrate application processes yield lower concentration residual impurities as well crystallization thermal ALD leads significant decrease etching rate. Crystalline materials showed rates down values
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