作者: Samuele Porro , Alladin Jasmin , Katarzyna Bejtka , Daniele Conti , Denis Perrone
DOI: 10.1116/1.4938465
关键词:
摘要: Atomic layer deposition (ALD) represents one of the most fundamental techniques capable satisfying strict technological requirements imposed by rapidly evolving electronic components industry. The actual scaling trend is leading to fabrication nanoscaled devices able overcome limits present microelectronic technology, which memristor principal candidates. Since their development in 2008, TiO2 thin film memristors have been identified as future technology for resistive random access memories because numerous advantages producing dense, low power-consuming, three-dimensional memory stacks. typical features ALD, such self-limiting and conformal without line-of-sight requirements, are strong assets fabricating these nanosized devices. This work focuses on realization based low-temperature ALD films. In this process, oxide was directly grown a polymeric photoresist, thus...