作者: Mikael Broas , Olli Kanninen , Vesa Vuorinen , Markku Tilli , Mervi Paulasto-Kröckel
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摘要: Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over lifetime of device or during processing. However, as-deposited ALD Al2O3 typically amorphous with poor resistance attack by aggressive solutions employed electronics manufacturing. Therefore, such films may not suitable further processing as solvent treatments could weaken protective barrier properties dissolved material contaminate baths, which cause cross-contamination a production line used manufacture different products. On contrary, heat-treated, crystalline has shown deterioration solutions, standard clean (SC) 1 2. this study, was from four precursor combinations subsequently annealed either at 600, 800, 1000 °C h. Crys...