作者: Troy W. Barbee , Stanley Mrowka , Michael C. Hettrick
DOI: 10.1364/AO.24.000883
关键词: Extreme ultraviolet lithography 、 Optics 、 Laser 、 Sputtering 、 Extreme ultraviolet 、 Materials science 、 Sputter deposition 、 Thin film 、 Silicon 、 Free electron model
摘要: Multilayer structures of molybdenum and silicon have been synthesized by sputter deposition onto flat single-crystal substrates spherically ground (0.5- 22.0-m radii) fused silica the reflectivities for 170.4-A (72.8-eV), 160.1-A (77.4-eV), 228-A (54.4-eV) light measured at near normal incidence. Observed peak values ranged from 26.2 to 78%, highest occurring closest Energy resolutions were ∼10 in all cases. Model calculations performed using optical constants literature experimentally determined multilayer structural parameters. In cases equal or larger (by up a factor 2) than calculated values, result attributed uncertainty used calculations. Experimental angular positions energy good agreement. The high these molybdenum-silicon will make possible application traditional optics approaches EUV support new developments including free electron lasers.