Optics and Multilayer Coatings for EUVL Systems
作者： Regina Soufli , Saša Bajt , Russell Hudyma , John Taylor
关键词: Lithography 、 Extreme ultraviolet lithography 、 Optics 、 Materials science 、 Optoelectronics 、 Wavelength 、 Illuminance 、 Photolithography
摘要: EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is considered an extension of optical lithography, which used for the high-volume manufacturing (HVM) today's microprocessors. The wavelength dictates use reflective elements (mirrors) as opposed to refractive lenses conventional lithographic systems. Thus, EUVL tools are based on all-reflective concepts: they multilayer (ML) coated optics their projection systems, have a ML-coated mask.
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