Low-stress and high-reflectance Mo/Si multilayers for extreme ultraviolet lithography by magnetron sputtering deposition with bias assistance.

摘要: To explore the potential of achieving low-stress and high-reflectance Mo/Si multilayers deposited by conventional magnetron sputtering with bias assistance, we investigated effects varying Ar gas pressure, substrate voltage, a bias-assisted Si ratio on stress extreme ultraviolet (EUV) reflectance multilayers. reduce damage ion bombardments an Si-on-Mo interface, only final part layer was assistance. Bias voltage has strong influence stress. The compressive can be reduced remarkably increasing due to increase Mo-on-Si interdiffusion postponement Mo crystallization transition. Properly choosing pressure is critical obtain high EUV reflectance. Appropriately decreasing interface roughness without interdiffusion. Too much assistance seriously optical contrast between layers lead remarkable decrease Thus, appropriately ratio, values order −100 MPa loss about 1%.