Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures

作者: J. M. Liang , L. J. Chen

DOI: 10.1063/1.361835

关键词:

摘要: Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform autocorrelation function analysis. For samples nominal atomic ratios Mo:Si=1:2 3:1, well defined were obtained after annealing at 250 °C for 30 min. On the other hand, distinct MoSi2/Si structure was formed only 650 °C 1 h. Multiphases observed to simultaneously form annealed 400–500 °C. After 600 °C h, tetragonal MoSi2 silicide phase samples, whereas both hexagonal present Mo:Si‐3:1 samples. The found depend critically on constituent elements, bilayer period, conditions. results are interpreted terms delicate balance among intermixing atoms, formation, crystallization silicon.

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