作者: C.K. Chung , S.T. Hung , C.W. Lai
DOI: 10.1016/J.SURFCOAT.2009.06.027
关键词: Nanoindentation 、 Composite material 、 Materials science 、 Scanning electron microscope 、 Ultra-high vacuum 、 Raman spectroscopy 、 Sputtering 、 Crystallography 、 Microstructure 、 Ion beam 、 Substrate (electronics)
摘要: Abstract Carbon nanofilms were deposited on the Si(100) wafers at substrate temperatures from room temperature (RT) to 700 °C by ultra-high-vacuum ion beam sputtering. The effect of evolution microstructure and mechanical properties carbon was investigated using Raman spectra, X-ray diffraction, scanning electron microscopy (SEM) nanoindentation. correlation between discussed. results showed that ID/IG ratio increased with RT 500 °C due graphitization more sp2 bonds then decreased 500 owing new SiC phase formation. In addition, C Si reaction found 600 °C an asymmetrical shift wavenumbers 900–1050 cm− 1 finished enhanced band as well no peak. A nanoweb-like morphology crystalline formation also observed surface film. both hardness Young's modulus films had similar trend microstructure. They 15.01 GPa 185.11 GPa RT, respectively, 4.50 GPa 60.53 GPa 500 °C, 32.53 GPa 200.82 GPa 700 °C. much are attributed morphology.