Effect of microstructure on the mechanical properties of carbon nanofilms deposited on the Si(100) at high temperature under ultra high vacuum

作者: C.K. Chung , S.T. Hung , C.W. Lai

DOI: 10.1016/J.SURFCOAT.2009.06.027

关键词: NanoindentationComposite materialMaterials scienceScanning electron microscopeUltra-high vacuumRaman spectroscopySputteringCrystallographyMicrostructureIon beamSubstrate (electronics)

摘要: Abstract Carbon nanofilms were deposited on the Si(100) wafers at substrate temperatures from room temperature (RT) to 700 °C by ultra-high-vacuum ion beam sputtering. The effect of evolution microstructure and mechanical properties carbon was investigated using Raman spectra, X-ray diffraction, scanning electron microscopy (SEM) nanoindentation. correlation between discussed. results showed that ID/IG ratio increased with RT 500 °C due graphitization more sp2 bonds then decreased 500 owing new SiC phase formation. In addition, C Si reaction found 600 °C an asymmetrical shift wavenumbers 900–1050 cm− 1 finished enhanced band as well no peak. A nanoweb-like morphology crystalline formation also observed surface film. both hardness Young's modulus films had similar trend microstructure. They 15.01 GPa 185.11 GPa RT, respectively, 4.50 GPa 60.53 GPa 500 °C, 32.53 GPa 200.82 GPa 700 °C. much are attributed morphology.

参考文章(19)
Brian Kelly, Physics of Graphite ,(1981)
Ji-Youn Seo, Seog-Young Yoon, Koichi Niihara, Kwang Ho Kim, Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition Thin Solid Films. ,vol. 406, pp. 138- 144 ,(2002) , 10.1016/S0040-6090(02)00061-5
Takuya Aoki, Hiroshi Hatta, Taku Hitomi, Hiroshi Fukuda, Ichiro Shiota, SiC/C multi-layered coating contributing to the antioxidation of C/C composites and the suppression of through-thickness cracks in the layer Carbon. ,vol. 39, pp. 1477- 1483 ,(2001) , 10.1016/S0008-6223(00)00276-1
C.K. Chung, C.W. Lai, C.C. Peng, B.H. Wu, Raman inspection for the annealing induced evolution of sp2 and sp3 bonding behavior in sandwiched Si/C/Si multilayer Thin Solid Films. ,vol. 517, pp. 1101- 1105 ,(2008) , 10.1016/J.TSF.2008.05.028
Pasqualina M Sarro, Silicon carbide as a new MEMS technology Sensors and Actuators A-physical. ,vol. 82, pp. 210- 218 ,(2000) , 10.1016/S0924-4247(99)00335-0
Andreas Kailer, Klaus G. Nickel, Yury G. Gogotsi, Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations Journal of Raman Spectroscopy. ,vol. 30, pp. 939- 946 ,(1999) , 10.1002/(SICI)1097-4555(199910)30:10<939::AID-JRS460>3.0.CO;2-C
Z. Sun, W.B. Jia, X. Shi, Enhancement of graphite surface mechanical properties using carbon film from polymer precursor Surface & Coatings Technology. ,vol. 122, pp. 277- 280 ,(1999) , 10.1016/S0257-8972(99)00379-5
Naoto Kikuchi, Eiji Kusano, Tatsuya Tanaka, Akira Kinbara, Hidehito Nanto, Preparation of amorphous Si1−xCx (0≤x≤1) films by alternate deposition of Si and C thin layers using a dual magnetron sputtering source Surface & Coatings Technology. ,vol. 149, pp. 76- 81 ,(2002) , 10.1016/S0257-8972(01)01415-3