Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition
作者： Ji-Youn Seo , Seog-Young Yoon , Koichi Niihara , Kwang Ho Kim
DOI: 10.1016/S0040-6090(02)00061-5
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摘要: Abstract SiC films were deposited on Si substrate by a plasma-enhanced chemical vapor deposition technique using gaseous mixture of SiCl 4 , CH H 2 and Ar. The behavior silicon carbide was investigated varying the temperature, RF power input gas ratio, R x [CH /(CH +H )]. method effectively enhanced rate crystallinity compared with thermal deposition. A small amount free co-deposited phase in this process; however, content negligible increasing temperature above 1270 °C decreasing value below 0.04. monolithic 3C-SiC film hardness approximately 28 GPa could be obtained at °C, 60 W an ratio
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