Residence-time dependent kinetics of CVD growth of SiC in the system
作者： A. Josiek , F. Langlais
DOI: 10.1016/0022-0248(95)00744-X
关键词: Residence time (fluid dynamics) 、 Growth rate 、 Physical chemistry 、 Volumetric flow rate 、 Chemistry 、 Decomposition 、 Activation energy 、 Chemical vapor deposition 、 Thermal decomposition 、 Analytical chemistry 、 Continuous reactor
摘要: Abstract In most chemical vapor deposition (CVD) experiments in flow reactors carried out until now, growth conditions were chosen which yield rates independent or linearly dependent on the total gas rate, so that residence time ( t ) of gases hot zone reactor should not play any role rate. We have performed CVD system MTS H 2 , under low decomposition MTS. found a region, where rate and its derivatives depend strongly operating conditions, particular, SiC increases with an increase . For lower higher (but yet incomplete) MTS, becomes again apparent energy activation ∼ 200 kJ/mol.
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