Fabricating SiC whiskers of different sizes by controlling only the CVD deposition position

摘要: Silicon carbide (SiC) whiskers were produced at different positions in the chemical vapor deposition (CVD) furnace. The effect of shifts specimen position on vapor–solid (VS) whisker growth was studied. First, we confirmed major factors influencing CVD by controlling position. source reactant depletion and temperature gradient acted to reduce diameter 33.3 61.7%, but gas residence time only accounted for 4.2% reduction. upon which all three showed a 74.2% decrease diameter. Transmission electron microscopy (TEM) observation that had highly crystalline FCC structures. front perpendicular higher stacking fault densities, whereas back horizontal possessed no faults. These results suggest variation led rate difference, affected stability growth. Based this idea, possibility synthesizing two diameters same substrate. This can propose new network structure consisting combined whiskers. report focuses varying size instead changing conditions as is common.