Extreme low voltage field emission of SiC nanowire
作者： Meng Liu , Tie Li , Yuelin Wang
DOI: 10.1109/DTIP.2017.7984477
关键词: Low voltage 、 Transistor 、 Silicon carbide 、 Field electron emission 、 Nanowire 、 Anode 、 Optoelectronics 、 Cathode 、 Materials science 、 Common emitter 、 Nanotechnology
摘要: Field emission properties of SiC emitters with 14 nm gap between the cathode and anode are investigated here. With this nano gap, field can be turned on at 3V, which is much lower than that in previous works comparable to CNT emitters. Its current follows Fowler-Nordheim relationship reaches up 22.3nA 5V. The influence emitter width also decrease width, from single significantly enhanced. This work provides a path way design optimize based vacuum devices working low voltage.
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