作者: George D. Papasouliotis , Stratis V. Sotirchos
DOI: 10.1149/1.2054969
关键词: Chemical reaction 、 Chemical vapor deposition 、 Deposition (phase transition) 、 Equilibrium constant 、 Physical chemistry 、 Silicon 、 Thermodynamics 、 Thermal decomposition 、 Chemistry 、 Methyltrichlorosilane 、 Carbide
摘要: Equilibrium gas‐phase calculations for the Si/C/Cl/H deposition system are performed over the range of conditions used to deposit silicon carbide through the thermal decomposition of …