Kinetic Investigation on the Deposition of SIC from Methyltrichlorosilane and Hydrogen
作者： Cuiying Lu , Laifei Cheng , Chunnian Zhao , Litong Zhang , Fang Ye
DOI: 10.1002/9780470640845.CH8
关键词:
摘要:
sci-hub.se 参考文章(9)
F. Loumagne, F. Langlais, R. Naslain, Experimental kinetic study of the chemical vapour deposition of SiC-based ceramics from CH3SiCl3H2 gas precursor Journal of Crystal Growth. ,vol. 155, pp. 198- 204 ,(1995) , 10.1016/0022-0248(95)00180-8
A. Josiek, F. Langlais, Residence-time dependent kinetics of CVD growth of SiC in the system Journal of Crystal Growth. ,vol. 160, pp. 253- 260 ,(1996) , 10.1016/0022-0248(95)00744-X
T.M. Besmann, B.W. Sheldon, M.D. Kaster, Temperature and concentration dependence of SiC deposition on Nicalon fibers Surface & Coatings Technology. pp. 167- 175 ,(1990) , 10.1016/0257-8972(90)90071-J
O. Feron, F. Langlais, R. Naslain, J. Thebault, On kinetic and microstructural transitions in the CVD of pyrocarbon from propane Carbon. ,vol. 37, pp. 1343- 1353 ,(1999) , 10.1016/S0008-6223(98)00329-7
Byung Jin Choi, Dai Ryong Kim, Growth of silicon carbide by chemical vapour deposition Journal of Materials Science Letters. ,vol. 10, pp. 860- 862 ,(1991) , 10.1007/BF00724761
Theodore M. Besmann, Brian W. Sheldon, Thomas S. Moss, Michael D. Kaster, Depletion Effects of Silicon Carbide Deposition from Methyltrichlorosilane Journal of the American Ceramic Society. ,vol. 75, pp. 2899- 2903 ,(1992) , 10.1111/J.1151-2916.1992.TB05529.X
Myoung Gi So, John S. Chun, Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 6, pp. 5- 8 ,(1988) , 10.1116/1.574969
A.W.C. van Kemenade, C.F. Stemfoort, On the formation of β-SiC from pyrolysis of CH3SiCl3 in hydrogen Journal of Crystal Growth. ,vol. 12, pp. 13- 16 ,(1972) , 10.1016/0022-0248(72)90331-4
Dieter Neuschütz, Farzin Salehomoum, Kinetics of Chemical Vapor Deposition of Sic Between 750 and 850°C at 1 Bar Total Pressure MRS Proceedings. ,vol. 250, pp. 41- 46 ,(1991) , 10.1557/PROC-250-41