Electrical properties of sol-gel processed barium titanate films

作者: H. Basantakumar Sharma , H.N.K. Sarma

DOI: 10.1016/S0040-6090(98)00551-3

关键词: Inorganic chemistryCoercivityBarium oxideFerroelectricityPermittivityDissipation factorMaterials scienceDielectricDielectric lossAnalytical chemistryBarium titanate

摘要: … The sol-gel technique has been used to prepare ferroelectric barium titanate (BaTiO 3 ) films. The electrical properties of the films have been investigated systematically. The room …

参考文章(18)
K. Sreenivas, Ferroelectric Thin Film Processing Birkhäuser Basel. pp. 213- 239 ,(1993) , 10.1007/978-3-0348-7551-6_8
A. Mansingh, M. Sayer, Dielectric response of ferroelectric films international symposium on applications of ferroelectrics. pp. 663- 668 ,(1994) , 10.1109/ISAF.1994.522456
K. Sreenivas, Abhai Mansingh, M. Sayer, Structural and electrical properties of rf-sputtered amorphous barium titanate thin films Journal of Applied Physics. ,vol. 62, pp. 4475- 4481 ,(1987) , 10.1063/1.339037
M. N. Kamalasanan, Subhas Chandra, P. C. Joshi, Abhai Mansingh, Structural and optical properties of sol-gel-processed BaTiO3 ferroelectric thin films Applied Physics Letters. ,vol. 59, pp. 3547- 3549 ,(1991) , 10.1063/1.105653
K. Iijima, T. Terashima, K. Yamamoto, K. Hirata, Y. Bando, Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation Applied Physics Letters. ,vol. 56, pp. 527- 529 ,(1990) , 10.1063/1.103300
J. Xu, A.S. Shaikh, R.W. Vest, High K BaTiO/sub 3/ films from metalloorganic precursors IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. ,vol. 36, pp. 307- 312 ,(1989) , 10.1109/58.19168
S. B. Krupanidhi, D. Roy, Effect of low pressure dc plasma discharge on laser ablated ferroelectric Pb(Zr,Ti)O3 thin films Journal of Applied Physics. ,vol. 72, pp. 620- 625 ,(1992) , 10.1063/1.351843
P. K. Larsen, G. J. M. Dormans, D. J. Taylor, P. J. van Veldhoven, Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model Journal of Applied Physics. ,vol. 76, pp. 2405- 2413 ,(1994) , 10.1063/1.357589