Structural and electrical properties of rf-sputtered amorphous barium titanate thin films

摘要: Structural and electrical properties of rf‐sputtered amorphous BaTiO3 thin films grown on water‐cooled substrates have been investigated. The dielectric studied for under varying sputtering gas composition (Ar+O2 mixtures) as a function film thickness, frequency, temperature. As‐grown were in nature highly transparent. Post‐deposition annealing had no discernible effect either structure or properties, there was evidence ferroelectricity. Films sputtered pure argon showed constant e’∼12 with little dependence frequency (0.1–100 kHz) over the temperature range 0–75 °C. thickness percentage oxygen during growth. thickness‐dependent conducting glass could be satisfactorily explained by model based existence electrode barriers. high breakdown voltage (106 V/cm), charge storage capacity (3.1 μC/cm2), frequency‐ temperature‐dependent a‐BaTiO3 show promise application insulating layers thin‐film electroluminescent display devices.