Preparation and characterization of rf sputtered indium tin oxide films
作者： K. Sreenivas , T. Sudersena Rao , Abhai Mansingh , Subhash Chandra
DOI: 10.1063/1.335481
关键词:
摘要: … Indium tin oxide films have … annealing (at 350C) in different ambients (02, N2, and cracked ammonia). Influence of a reactive gas (oxygen) on the sputtering rate of a metallic (indium/tin) …
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