作者: Song Bo Yang , Ming Hua Tang , Guo Yang Wang , Bo Jiang , Hua Yu Xu
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.320.170
关键词: Materials science 、 Leakage (electronics) 、 Thin film 、 Fabrication 、 Composite material 、 Electric field 、 Electronic engineering 、 Composite number 、 Ferroelectricity 、 Dielectric 、 Microstructure
摘要: The microstructure and electrical properties of P(VDF-TrFE)/Bi3.5Nd0.5Ti3O12 bi-layer composite ferroelectric thin films deposited on Pt/Ti/SiO2/Si using two successive spin coatings were investigated. It shows the pores in Bi3.5Nd0.5Ti3O12 (BNT) effectively suppressed by presence P(VDF-TrFE) copolymer SEM. ferroelectric, leakage dielectric with different thickness ratio BNT measured. With increasing P(VDF-TrFE), remnant polarization, coercive electric field, current density constant all decreased (except pure film). Results indicate that key improved a little loss which infers potential application filed memory.