Ferroelectric properties of Bi3.6Ho0.4Ti3O12 thin films prepared by sol-gel method
作者： Dongyun Guo , Meiya Li , Jing Wang , Jun Liu , Benfang Yu
DOI: 10.1063/1.2821836
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摘要: The Ho-substituted bismuth titanate [(Bi3.6Ho0.4Ti3O12), (BHT)] thin films were prepared on Pt∕Ti∕SiO2∕Si substrates by sol-gel method. microstructure and electrical properties investigated. BHT film consists of a single phase Bi-layered Aurivillius structure. surface is uniform, smooth, crack-free, with dense microstructure. 600-nm-thick exhibits 2Pr 44.2μC∕cm2 2Ec 323.7kV∕cm at 500kV∕cm. After the switching 4.46×109cycles, shows fatigue-free (only 3% degradation). dielectric constant loss are about 489 0.018 frequency 1MHz, respectively. good insulating behavior according to test leakage current.
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