SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSION
作者： G. A. Antcliffe , J. S. Wrobel
DOI: 10.1063/1.1653406
关键词: Radiation 、 Materials science 、 Superluminescent diode 、 Diffusion (business) 、 Impurity 、 Wavelength 、 Laser 、 Optoelectronics 、 Diode 、 Impurity diffusion
摘要: Impurity diffusion, using the donor impurity Sb, has been used to prepare high‐quality Pb1−xSnxTe (x=0.13–0.20) light‐emitting diodes. The emission of 8–14 μ spontaneous and laserlike radiation from these diodes is discussed in terms optical gain expected at wavelengths.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(5)
J. O. Dimmock, I. Melngailis, A. J. Strauss, Band Structure and Laser Action inPbxSn1−xTe Physical Review Letters. ,vol. 16, pp. 1193- 1196 ,(1966) , 10.1103/PHYSREVLETT.16.1193
J. F. Butler, T. C. Harman, LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS Applied Physics Letters. ,vol. 12, pp. 347- 349 ,(1968) , 10.1063/1.1651847
Amnon Yariv, R. C. C. Leite, Super Radiant Narrowing in Fluorescence Radiation of Inverted Populations Journal of Applied Physics. ,vol. 34, pp. 3410- 3411 ,(1963) , 10.1063/1.1729206
J. F. Butler, A. R. Calawa, T. C. Harman, DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTe Applied Physics Letters. ,vol. 9, pp. 427- 429 ,(1966) , 10.1063/1.1754640
N. Patel, A. Yariv, Electrical and optical characteristics of InAs junction lasers IEEE Journal of Quantum Electronics. ,vol. 6, pp. 383- 388 ,(1970) , 10.1109/JQE.1970.1076467