Growth and characterization of lead-tin telluride epitaxial layers

摘要: Pb1−xSnxTe single crystal epitaxial layers have been grown from metal-rich solutions on substrates. The were melts containing 0.01 to 0.20 atomic fraction tellurium at temperatures 500 750 °C both 〈111〉 and 〈100〉 oriented Characterization of the was by X-ray, optical, electrical, etching techniques. Liquidus curves covering metallic side phase diagram established. Diodes fabricated several using grown-in junction compared with diffused diodes prepared same substrate material. Incremental resistance values observed for PbTe Pb0.83Sn0.17Te 77 °K that up an order magnitude larger than those diodes. Des couches epitaxiales de ont ete obtenues dans des enrichies metaux sur substrates Pb1−xSnxTe. Les preparees a partir contenant 0,01 0,20 atomique aux orientes les directions et 〈100〉. L'action caracterisation faite par techniques rayons X, optique electrique. courbes liquidus qui couvrent le cǒte metallique du diagramme etablies. Des fabriquees plusieurs utilisont la jonction interne comparees avec jonctions diffusees měme materiel. valeurs observees pour Pb0,83Sn0,17Te furent superieures celles diffusees.