LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te
作者： K. W. Nill , A. R. Calawa , T. C. Harman , J. N. Walpole
DOI: 10.1063/1.1653031
关键词:
摘要: Laser emission is obtained from forward biased evaporated metal barriers on degenerate p‐PbTe and p‐Pb0.8Sn0.2Te at T=4.2°K. Metals with small work functions such as In, Pb, Zn produce a inverted n‐type surface region p‐type samples without chemical doping. Low‐threshold laser has been these λ = 6.4μ Pb 15μ.
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