Zinc oxide light emitting diode

作者: William C. Tait , Richard L. Weiher , Marvin H. Christmann

DOI:

关键词:

摘要: A light emitting diode comprising a single crystal of high efficiency violet fluorescing zinc oxide together with an ohmic cathode and rectifying anode secured thereto. The emits near band-gap radiation at room temperature when energized low D.C. voltage. produced is believed to be associated radiative recombination free excitons.

参考文章(7)
K. W. Nill, A. R. Calawa, T. C. Harman, J. N. Walpole, LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te Applied Physics Letters. ,vol. 16, pp. 375- 377 ,(1970) , 10.1063/1.1653031
Albrecht G. Fischer, Herbert I. Moss, Tunnel‐Injection Electroluminescence Journal of Applied Physics. ,vol. 34, pp. 2112- 2113 ,(1963) , 10.1063/1.1729755
R. C. Neville, C. A. Mead, Surface Barriers on Zinc Oxide Journal of Applied Physics. ,vol. 41, pp. 3795- 3800 ,(1970) , 10.1063/1.1659509
Iida Yoshio, Matsuoka Michio, Masuyama Takeshi, Voltage dependent resistors in a surface barrier type ,(1970)
Iv Thomas B Hutchins, George C Douglas, Metal to semiconductor rectifying junction ,(1961)
William C Tait, James R Packard, Donald A Campbell, Zinc oxide laser ,(1966)