Surface Barriers on Zinc Oxide

摘要: The surface barrier systems consisting of gold and palladium on chemically prepared zinc oxide have been investigated in detail. Surface energies have been determined by photoresponse, forward current versus voltage, thermal activation energy, capacitance-voltage methods. Agreement barrier energies obtained the four methods is excellent. energy for 0.66 eV palladium is 0.60 eV. Forward current-voltage characteristics were quantitative agreement with simple Bethe diode theory as modified presence image force lowering. reverse characteristic is that expected from lowering barrier, over a bias range 0.1 to 3 V. Carrier concentration derived resistivity Hall measurements agreed measurements. We believe this represents first comprehensive study where such consistency has demonstrated a compound semiconductor barrier system. Existence deep level trap indicated via effects capacitance