Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide
作者： Lukas Mai , Nils Boysen , David Zanders , Teresa de los Arcos , Felix Mitschker
关键词: Alkyl 、 Thermal stability 、 Atomic layer deposition 、 Reactivity (chemistry) 、 Aluminium 、 Aluminium oxide 、 Inorganic chemistry 、 Chemistry 、 Evaporation (deposition) 、 Trimethylaluminium
摘要: New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to pyrophoric trimethylaluminium (TMA) which is date a widely used Al precursor. Combining high reactivity alkyls employing 3-(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non-pyrophoric compounds [Al(NMe2 )2 (DMP)] (2), [Al(NEt2 (3, BDEADA) and [Al(NiPr2 (4), combine properties both systems. The were synthesized thoroughly chemically characterized, showing intramolecular stabilization DMP well only reactive Al-C Al-N bonds, key factors thermal stability accompanied by sufficient reactivity, being crucial ALD precursors. Upon rational variation alkyl chains, tunable evaporation rates found, revealed evaluation. In addition, promising plasma enhanced (PE)ALD process using BDEADA oxygen in wide temperature range from 60 220 °C compared that modified TMA, namely [AlMe2 (DMAD). resulting Al2 O3 layers density, smooth, uniform, purity. applicability films effective gas barrier (GBLs) was successfully demonstrated, considering coating on polyethylene terephthalate (PET) substrates very good transmission (OTR) an improvement factor 86 15 nm film DMAD 25 thickness just 5 nm BDEDA bare PET substrates. All these attributes same quality those obtained industrial rendering precursors safe TMA.
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