作者: R. Orlowski , E. Krätzig
DOI: 10.1016/0038-1098(78)91570-3
关键词: Optoelectronics 、 Doping 、 Charge (physics) 、 Holography 、 Transition metal 、 Electron 、 Materials science
摘要: Abstract A new experimental method based on holographic techniques is proposed, which allows the determination of electron and hole contributions to photo-induced charge transport in highly insulating electro-optic crystals. Experimental results for transition metal doped LiNbO3- LiTaO3- crystals are presented.