Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
作者： M. R. Holzworth , N. G. Rudawski , P. G. Whiting , S. J. Pearton , K. S. Jones
DOI: 10.1063/1.4813535
关键词: Scanning transmission electron microscopy 、 Stack (abstract data type) 、 Scanning electron microscope 、 Transistor 、 Wide-bandgap semiconductor 、 Electron mobility 、 Transmission electron microscopy 、 Layer (electronics) 、 Materials science 、 Analytical chemistry 、 Optoelectronics
摘要: AlGaN/GaN high electron mobility transistors were electrically stressed using off-state reverse gate biases. In devices demonstrating the largest, most rapid decrease in normalized maximum drain current, defects found at gate/AlGaN epilayer interface and characterized high-angle annular dark-field scanning transmission microscopy. These appear to be a reaction between Ni layer of Ni/Au metal stack AlGaN epilayer. Additionally, simulations electric field lines from defective match defect morphology. results provide important insight toward understanding failure mechanisms improving reliability Ni-gate transistors.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(25)
Mark E. Law, Stephen M. Cea, Continuum based modeling of silicon integrated circuit processing: An object oriented approach Computational Materials Science. ,vol. 12, pp. 289- 308 ,(1998) , 10.1016/S0927-0256(98)00020-2
E.A. Douglas, C.Y. Chang, D.J. Cheney, B.P. Gila, C.F. Lo, Liu Lu, R. Holzworth, P. Whiting, K. Jones, G.D. Via, Jinhyung Kim, Soohwan Jang, Fan Ren, S.J. Pearton, AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress Microelectronics Reliability. ,vol. 51, pp. 207- 211 ,(2011) , 10.1016/J.MICROREL.2010.09.024
Martin Kuball, Milan Ťapajna, Richard J.T. Simms, Mustapha Faqir, Umesh K. Mishra, AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes Microelectronics Reliability. ,vol. 51, pp. 195- 200 ,(2011) , 10.1016/J.MICROREL.2010.08.014
Feng Gao, Bin Lu, Libing Li, Stephen Kaun, James S. Speck, Carl. V. Thompson, Tomás Palacios, Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 99, pp. 223506- ,(2011) , 10.1063/1.3665065
S.Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim, Physical degradation of GaN HEMT devices under high drain bias reliability testing Microelectronics Reliability. ,vol. 49, pp. 478- 483 ,(2009) , 10.1016/J.MICROREL.2009.02.015
Libing Li, Jungwoo Joh, J. A. del Alamo, Carl V. Thompson, Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 100, pp. 172109- ,(2012) , 10.1063/1.4707163
E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G.D. Via, F. Ren, S.J. Pearton, Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. ,vol. 52, pp. 23- 28 ,(2012) , 10.1016/J.MICROREL.2011.09.018
Prashanth Makaram, Jungwoo Joh, Jesús A del Alamo, Tomás Palacios, Carl V Thompson, None, Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 96, pp. 233509- ,(2010) , 10.1063/1.3446869
Michael R. Johnson, David A. Cullen, Lu Liu, Tsung Sheng Kang, Fan Ren, Chih-Yang Chang, Stephen J. Pearton, Soohwan Jang, J. Wayne Johnson, David J. Smith, Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices Journal of Vacuum Science & Technology B. ,vol. 30, pp. 062204- ,(2012) , 10.1116/1.4766303
Shawn D. Burnham, Ross Bowen, Pete Willadsen, Hector Bracamontes, Paul Hashimoto, Ming Hu, Danny Wong, Mary Chen, Miroslav Micovic, Reliability of T-gate AlGaN/GaN HEMTs Physica Status Solidi (c). ,vol. 8, pp. 2399- 2403 ,(2011) , 10.1002/PSSC.201000916