AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
作者： Martin Kuball , Milan Ťapajna , Richard J.T. Simms , Mustapha Faqir , Umesh K. Mishra
DOI: 10.1016/J.MICROREL.2010.08.014
关键词:
摘要: … the initial stages of AlGaN/GaN HEMT device degradation. This … reducing dislocation density in AlGaN/GaN HEMTs and changes … AlGaN/GaN HEMT reliability beyond state-of-the-art. …
elsevier.com
sci-hub.se 参考文章(21)
S. J. Pearton, H. Cho, J. R. LaRoche, F. Ren, R. G. Wilson, J. W. Lee, Oxygen diffusion into SiO2-capped GaN during annealing Applied Physics Letters. ,vol. 75, pp. 2939- 2941 ,(1999) , 10.1063/1.125194
G. Meneghesso, R. Pierobon, F. Rampazzo, G. Tamiazzo, E. Zanoni, J. Bernat, P. Kordos, A.F. Basile, A. Chim, G. Verzellesi, Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC international reliability physics symposium. pp. 415- 422 ,(2005) , 10.1109/RELPHY.2005.1493122
J. W. Pomeroy, M. Kuball, M. J. Uren, K. P. Hilton, R. S. Balmer, T. Martin, Insights into electroluminescent emission from AlGaN /GaN field effect transistors using micro-Raman thermal analysis Applied Physics Letters. ,vol. 88, pp. 023507- ,(2006) , 10.1063/1.2163076
T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, M. Kuball, Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy Journal of Applied Physics. ,vol. 106, pp. 094509- 094509 ,(2009) , 10.1063/1.3254197
M. Ťapajna, U. K. Mishra, M. Kuball, Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress Applied Physics Letters. ,vol. 97, pp. 023503- 023503 ,(2010) , 10.1063/1.3460529
J. S. Christensen, H. H. Radamson, A. Yu. Kuznetsov, B. G. Svensson, Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures Journal of Applied Physics. ,vol. 94, pp. 6533- 6540 ,(2003) , 10.1063/1.1622771
Prashanth Makaram, Jungwoo Joh, Jesús A del Alamo, Tomás Palacios, Carl V Thompson, None, Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors Applied Physics Letters. ,vol. 96, pp. 233509- ,(2010) , 10.1063/1.3446869
Albert C. M. Wang, S. Kakihana, Leakage and h FE degradation in microwave bipolar transistors IEEE Transactions on Electron Devices. ,vol. 21, pp. 667- 674 ,(1974) , 10.1109/T-ED.1974.17992
Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors Applied Physics Letters. ,vol. 96, pp. 053505- ,(2010) , 10.1063/1.3293008
A. Sarua, Hangfeng Ji, M. Kuball, M. J. Uren, T. Martin, K. J. Nash, K. P. Hilton, R. S. Balmer, Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias Applied Physics Letters. ,vol. 88, pp. 103502- ,(2006) , 10.1063/1.2182011