Junction temperature measurements and reliability of GaN FETs
作者： Martin Kuball , James W. Pomeroy , Miguel Montes Bajo , Marco Silvestri , Michael J. Uren
DOI: 10.1117/12.2007817
关键词:
摘要: AlGaN/GaN field effect transistors (FETs) have shown tremendous advances in performance and reliability over recent years. They are unique that they operate under the presence of a high density defects, imperfect surfaces interfaces. We review key challenges related to defects these transistors, novel characterization techniques approaches study impact imperfections on device thermal characteristics reliability, as basis for developing devices with an increased safe operating area (SOA). This includes development nanometer resolution junction temperature analysis using SiC solid immersion lenses, results hot electron effects role dislocations point reliability. In addition such dynamic transconductance access traps near channel presented. The take advantage complementary nature electrical, optical microstructural analysis, combined electrical simulations.
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sci-hub.se 参考文章(20)
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