An electro-mechanical simulation of off state AlGaN/GaN device degradation
作者： David Horton , Fan Ren , Liu Lu , Mark E Law
DOI: 10.1109/IRPS.2012.6241880
关键词:
摘要: An electro-mechanical simulation of the degradation AlGaN/GaN HEMT's in Off-state. Strain driven diffusion impurities from gate into AlGaN layer increases trap density which leads to unrecoverable decreases drain current.
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